cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 1/10 MBNP2026G6 cystek product specification n- channel enhancement mode mo sfet and pnp bjt complex device MBNP2026G6 description the MBNP2026G6 consists of a n-channel enhancem ent-mode mosfet and a pnp bjt in a single tsop-6 package, providing the designer with the be st combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the tsop-6 package is universally preferred for a ll commercial-industrial surface mount applications. features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? pb-free package equivalent circuit outline MBNP2026G6 tsop-6 c2 s1 d1 g1 e2 b2 g gate b : base s source e : emitter d drain c : collector
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 2/10 MBNP2026G6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol n-channel pnp unit drain-source breakdown voltage bv dss 30 v gate-source voltage v gs 12 v collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v continuous drain current (note 1) i d 100 ma pulsed drain current (note 2) i dm 400 ma collector current(dc) (note 1) i c -3 a peak collector current (note 2) i cm -5 a peak base current (note 2) i bm -500 ma pd 1.3 w total power dissipation (note 1) linear derating factor 0.01 w / c operating junction and storage temperature tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 110 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec; 180 c/w when mounted on minimum copper pad 2. pulse width limited by maximum junction temperature n-channel mosfet el ectrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =100 a v gs(th) 0.8 1.3 1.5 v v ds =3v, i d =100 a i gss - - 1 a v gs = 20v, v ds =0 i dss - - 100 na v ds =30v, v gs =0 - 3.4 8 v gs =4v, i d =10ma r ds(on) - 6.9 13 v gs =2.5v, i d =1ma g fs 20 50 - ms v ds =3v, i d =10ma dynamic ciss - 12.5 - coss - 7.3 - crss - 3.5 - pf v ds =5v, v gs =0, f=1mhz *t d(on) - 15 - *t r - 35 - *t d(off) - 75 - *t f - 75 - ns v dd P 5v, i d =10ma, v gs =5v, r l =500 , r g =10 rg - 1.1 1.7 f=1mhz source-drain diode *v sd - 0.88 1.2 v v gs =0v, i s =100ma *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 3/10 MBNP2026G6 cystek product specification pnp bjt electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions bv cbo -40 - - v i c =-50 a, i e =0 bv ceo -30 - - v i c =-1ma, i b =0 bv ebo -5 - - v i e =-50 a, i c =0 i cbo - - -100 na v cb =-40v, i e =0 i ebo - - -100 na v eb =-5v, i c =0 *v ce(sat) 1 - - -0.2 v i c =-100ma, i b =-1ma *v ce(sat) 2 - - -0.3 v i c =-500ma, i b =-50ma *v ce(sat) 3 - - -0.4 v i c =-1a, i b =-100ma *v be(sat) - - -1.2 v i c =-1a, i b =-50ma *v be(on) - - -1 v v ce =-5v, i c =-1a *h fe 1 250 - 500 - v ce =-5v, i c =-100ma *h fe 2 180 - - - v ce =-5v, i c =-500ma *h fe 3 140 - - - v ce =-5v, i c =-1a f t - 180 - mhz v ce =-5v, i e =-0.1a, f=100mhz cob - 20 - pf v cb =-10v, f=1mhz *pulse test : pulse width 380 s, duty cycle 2% ordering information device package shipping marking MBNP2026G6 tsop-6 (pb-free lead plating & halogen-free package) 3000 pcs / tape & reel 2026
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 4/10 MBNP2026G6 cystek product specification n-channel mosfet characteristic curves typical output characteristics 0 0.05 0.1 0.15 0123 4 gate threshold voltage vs channel temperature 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 channel temperature---tch(c) gate threshold voltage---v gs (th)(v) drain-source voltage ---v ds (v) drain current --- i d (a) vgs=1.5v 3.5 v 2v 2.5v 3v 4v t a =25c typical transfer characteristics 0 50 100 150 200 01234 gate-source voltage---v gs (v) drain current ---i d (ma) v ds =3v 25c 125c 75c static drain-source on-state resistance with temperature 2 3 4 5 -50 -25 0 25 50 75 100 125 150 channel temperature---tch(c) static drain-source on-state resistance() i d =50ma i d =100ma v gs =4v static drain-source on-state resistance vs drain current 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance--- r ds (on)() v gs =2.5v v gs =4v t a =25c static drain-source on-state resistance vs drain current 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance--- r ds( on) () v gs =4v v gs =2.5v t a =125c
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 5/10 MBNP2026G6 cystek product specification n-channel mosfet char acteristic curves(cont.) static drain-source on-state resistance vs drain current 1 10 100 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance- r ds( on) () ta=25c ta=125c ta=75c v gs =2.5v static drain-source on-state resistance vs drain current 1 10 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance- r ds( on) () ta=25c ta=125c ta=75c v gs =4v static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 8 9 10 024681 0 static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 8 9 10 024681 gate-source voltage---v gs (v) static drain-source on-state resistance---r ds( on) () 0 ta=25c id=100ma ta=125c ta=75c gate-source voltage---v gs (v) static drain-source on-state resistance---r ds( on) () ta=25c id=50ma ta=125c ta=75c reverse drain current vs source-drain voltage(i) 0.1 1 10 100 1000 00 . 511 . 5 reverse drain current vs source-drain voltage(ii) 0.1 1 10 100 1000 00 . 511 source-drain voltage-v sd (v) reverse drain current-i dr (ma) source-drain voltage-v sd (v) reverse drain current-i dr (ma) t a =25c t a =75c . 5 v gs =0v v gs =4v t a =125c
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 6/10 MBNP2026G6 cystek product specification n-channel mosfet ch aracteristic curves(cont.) capacitance vs drain-to-source voltage 1 10 100 01 02 0 3 0 foreward transfer admittance vs drain current 1 10 100 1000 1 10 100 1000 drain current---i d (ma) forward transfer admittance--- y fs (ms) v ds =3v ta=25c drain-source voltage---v ds (v) capacitance---(pf) ciss ta=75c c oss ta=125c crss
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 7/10 MBNP2026G6 cystek product specification pnp bjt characteristic curves emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5m a 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 1 2 3 4 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 4ma 6ma 8ma 10ma 20ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 15ma 20ma 50ma current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=50ib vcesat=10ib vcesat=20ib
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 8/10 MBNP2026G6 cystek product specification pnp bjt characteristic curves (cont.) saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) vce=5v
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 9/10 MBNP2026G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c197g6 issued date : 2011.01.20 revised date : page no. : 10/10 MBNP2026G6 cystek product specification tsop-6 dimension marking: 6-lead tsop-6 plastic surface mounted package cystek package code: g6 style: pin 1. gate1 (g1) pin 2. emitter2 (e2) pin 3. base2 (b2) pin 4. collector2 (c2) pin 5. source1 (s1) pin 6. drain1 ( d1 ) 2026 device name date code inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1063 0.1220 2.70 3.10 g 0 0.0039 0 0.10 b 0.1024 0.1181 2.60 3.00 h - 0.0098 - 0.25 c 0.0551 0.0709 1.40 1.80 i 0.0047 ref 0.12 ref d 0.0748 ref 1.90 ref j 0.0177 ref 0.45 ref d1 0.0374 ref 0.95 ref k 0.0236 ref 0.60 ref d2 0.0374 ref 0.95 ref l 0 10 0 10 e 0.0118 0.0197 0.30 0.50 m - 0.0433 - 1.10 f 0.0276 0.0394 0.70 1.00 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
